■ 제품필수정보

제조사	IXYS
제조사품명	IXFN210N30P3
간략설명	N-Channel MOSFET, 192 A, 300 V, 4-Pin SOT-227 IXYS IXFN210N30P3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 192 A Maximum Drain Source Voltage = 300 V
패키지 = SOT-227B
장착형태 = Screw Mount
핀수 = 4 Maximum Drain Source Resistance = 14.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Maximum Power Dissipation = 1.5 kW Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 1
시리즈 = HiperFET, Polar3 N-channel Power MOSFET, IXYS HiperFET??Polar3??
시리즈. A range of IXYS Polar3??series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET??