■ 제품필수정보

제조사	IXYS
제조사품명	IXFQ28N60P3
간략설명	N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-3PN IXYS IXFQ28N60P3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 28 A Maximum Drain Source Voltage = 600 V
패키지 = TO-3P
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 260 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Maximum Power Dissipation = 695 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V Width = 4.9mm
높이 = 20.3mm N-channel Power MOSFET, IXYS HiperFET??Polar3??
시리즈. A range of IXYS Polar3??series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET??