■ 제품필수정보

제조사	IXYS
제조사품명	IXFB210N30P3
간략설명	N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 210 A Maximum Drain Source Voltage = 300 V
패키지 = PLUS264
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 14.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Maximum Power Dissipation = 1.89 kW Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 1
높이 = 26.59mm N-channel Power MOSFET, IXYS HiperFET??Polar3??
시리즈. A range of IXYS Polar3??series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET??