■ 제품필수정보

제조사	IXYS
제조사품명	IXFB110N60P3
간략설명	N-Channel MOSFET, 110 A, 600 V, 3-Pin PLUS264 IXYS IXFB110N60P3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 110 A Maximum Drain Source Voltage = 600 V
패키지 = PLUS264
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 56 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 5V Maximum Power Dissipation = 1.89 kW Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
칩당 요소 수 = 1
시리즈 = HiperFET, Polar3 N-channel Power MOSFET, IXYS HiperFET??Polar3??
시리즈. A range of IXYS Polar3??series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET??