■ 제품필수정보

제조사	Onsemi
제조사품명	RFD12N06RLESM9A
간략설명	N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK onsemi RFD12N06RLESM9A

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 18 A Maximum Drain Source Voltage = 60 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 75 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 49 W Transistor Configuration = Single Maximum Gate Source Voltage = -16 V, +16 V
칩당 요소 수 = 1
시리즈 = UltraFET UltraFET® MOSFET, Fairchild Semiconductor. UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge. Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.