■ 제품필수정보

제조사	Toshiba
제조사품명	TK12A60W,S5VX(J
간략설명	N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220SIS Toshiba TK12A60W,S5VX(J

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 11.5 A Maximum Drain Source Voltage = 600 V
패키지 = TO-220SIS
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 300 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.7V Maximum Power Dissipation = 35 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
칩당 요소 수 = 1
시리즈 = DTMOSIV MOSFET N-Channel, TK1x
시리즈, Toshiba