■ 제품필수정보

제조사	Onsemi
제조사품명	NGTB50N120FL2WG
간략설명	onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 100 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 535 W
패키지 = TO-247
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Switching Speed = 1MHz Transistor Configuration = Single
크기 = 16.25 x 5.3 x 21.4mm
최소 작동 온도 = -55 °C IGBT Discretes, ON Semiconductor. Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.