■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SIB456DK-T1-GE3 |
| 간략설명 |
N-Channel MOSFET, 6.3 A, 100 V, 6-Pin PowerPAK SC-70 Vishay SIB456DK-T1-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 6.3 A Maximum Drain Source Voltage = 100 V
패키지 = PowerPAK SC-70
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 310 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.6V Maximum Power Dissipation = 13 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 1
시리즈 = ThunderFET N-Channel MOSFET, Medium Voltage/ThunderFET®, Vishay Semiconductor
