■ 제품필수정보

제조사	Vishay
제조사품명	SI1026X-T1-GE3
간략설명	Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-523 Vishay SI1026X-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 300 mA Maximum Drain Source Voltage = 60 V
패키지 = SOT-523 (SC-89)
장착형태 = Surface Mount
핀수 = 6 Maximum Drain Source Resistance = 2.5 Ω Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 250 mW Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 2
최소 작동 온도 = -55 °C Dual N-Channel MOSFET, Vishay Semiconductor