■ 제품필수정보

제조사	Vishay
제조사품명	SI2318CDS-T1-GE3
간략설명	N-Channel MOSFET, 5.6 A, 40 V, 3-Pin SOT-23 Vishay SI2318CDS-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 5.6 A Maximum Drain Source Voltage = 40 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 51 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 2.1 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V
칩당 요소 수 = 1
최소 작동 온도 = -55 °C N-Channel MOSFET, 30V to 50V, Vishay Semiconductor