■ 제품필수정보
| 제조사 |
Vishay |
| 제조사품명 |
SI1012CR-T1-GE3 |
| 간략설명 |
N-Channel MOSFET, 630 mA, 20 V, 3-Pin SC-75 Vishay SI1012CR-T1-GE3 |
■ 제품사양
Channel
타입 = N Maximum Continuous Drain Current = 630 mA Maximum Drain Source Voltage = 20 V
패키지 = SOT-416 (SC-75A)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 1.1 Ω Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 240 mW Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, +8 V
칩당 요소 수 = 1
최소 작동 온도 = -55 °C N-Channel MOSFET, 8V to 25V, Vishay Semiconductor
