■ 제품필수정보

제조사	Onsemi
제조사품명	FGA25N120ANTDTU
간략설명	onsemi FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3P, Through Hole

■ 제품사양

Maximum Continuous Collector Current = 50 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 312 W
패키지 = TO-3P
장착형태 = Through Hole Channel
타입 = N
핀수 = 3 Switching Speed = 1MHz Transistor Configuration = Single
크기 = 15.8 x 5 x 18.9mm
최대 작동 온도 = +150 °C Discrete IGBTs, 1000V and over, Fairchild Semiconductor