■ 제품필수정보

제조사	Toshiba
제조사품명	TPC8067-H,LQ(S
간략설명	N-Channel MOSFET, 9 A, 30 V, 8-Pin SOIC Toshiba TPC8067-H,LQ(S

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 33 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.3V Maximum Power Dissipation = 1.9 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 9.5 nC @ 10 V
높이 = 1.52mm MOSFET N-Channel, TPCxxxx, Toshiba