■ 제품필수정보

제조사	Toshiba
제조사품명	3SK291(TE85L,F)
간략설명	N-Channel MOSFET, 30 mA, 12.5 V Depletion, 4-Pin SMQ Toshiba 3SK291(TE85L,F)

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 30 mA Maximum Drain Source Voltage = 12.5 V
패키지 = SMQ
장착형태 = Surface Mount
핀수 = 4 Channel Mode = Depletion Maximum Gate Threshold Voltage = 1.5V Maximum Power Dissipation = 150 mW Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, +8 V
칩당 요소 수 = 1 Typical Power
이득 = 22.5 dB RF MOSFET Transistors, Toshiba