■ 제품필수정보

제조사	IXYS
제조사품명	IXFK26N120P
간략설명	N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXYS IXFK26N120P

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 26 A Maximum Drain Source Voltage = 1200 V
패키지 = TO-264
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 460 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 6.5V Maximum Power Dissipation = 960 W Transistor Configuration = Single Maximum Gate Source Voltage = -30 V, +30 V
칩당 요소 수 = 1
시리즈 = HiperFET, Polar N-channel Power MOSFET, IXYS HiperFET??Polar??
시리즈. N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET?? from IXYS