■ 제품필수정보

제조사	Vishay
제조사품명	SI4559ADY-T1-GE3
간략설명	Dual N/P-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC Vishay SI4559ADY-T1-GE3

■ 제품사양

Channel
타입 = N, P Maximum Continuous Drain Current = 3.9 A, 5.3 A Maximum Drain Source Voltage = 60 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 72 mΩ, 150 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 3.1 W, 3.4 W Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 13 nC @ 30 V, 14.5 nC @ 30 V
최소 작동 온도 = -55 °C Dual N/P-Channel MOSFET, Vishay Semiconductor