■ 제품필수정보

제조사	Vishay
제조사품명	SI4162DY-T1-GE3
간략설명	N-Channel MOSFET, 13.6 A, 30 V, 8-Pin SOIC Vishay SI4162DY-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 13.6 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 8 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2.5 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 20 nC @ 10 V, 8.8 nC @ 4.5 V
높이 = 1.5mm N-Channel MOSFET, 30V to 50V, Vishay Semiconductor