■ 제품필수정보

제조사	Vishay
제조사품명	Si4134DY-T1-GE3
간략설명	N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9.9 A Maximum Drain Source Voltage = 30 V
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 14 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1.2V Maximum Power Dissipation = 2.5 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Transistor Material = Si
최소 작동 온도 = -55 °C N-Channel MOSFET, 30V to 50V, Vishay Semiconductor