Channel 타입 = N Maximum Continuous Drain Current = 115 mA Maximum Drain Source Voltage = 60 V 패키지 = SOT-363 (SC-88) 장착형태 = Surface Mount 핀수 = 6 Maximum Drain Source Resistance = 13.5 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2V Maximum Power Dissipation = 200 mW Transistor Configuration = Isolated Maximum Gate Source Voltage = -20 V, +20 V 칩당 요소 수 = 2 최소 작동 온도 = -55 °C Dual N-Channel MOSFET, Diodes Inc.