상품이미지
  •  상품이미지
  •  상품이미지

MPN : 25AA512-I/SN

Microchip 25AA512-I/SN, 512kbit Serial EEPROM Memory, 250ns 8-Pin SOIC Serial-SPI
  • 브랜드

    Microchip

  • 무원상품코드

    M011986005164

  • 타입별
    EA
  • 주문가능수량

    품 절

  • 최소주문수량1
  • 판매단위1
  • 제품정보
  • 배송정보
    (영업일 기준)
  • 특이사항
구매수량 :

*대량구매해택
  • 수량단가1 : 1개 ~ 3,324원

  • 수량단가2 : 25개 ~ 3,259원

  • 수량단가3 : 50개 ~ 3,194원


총금액
(VAT 별도)

  • 상품정보
  • 상품후기
  • 상품문의
  • 배송/AS안내

■ 제품필수정보

제조사 Microchip
제조사품명 25AA512-I/SN
간략설명 Microchip 25AA512-I/SN, 512kbit Serial EEPROM Memory, 250ns 8-Pin SOIC Serial-SPI

■ 제품사양

Memory Size = 512kbit Interface
타입 = Serial-SPI
패키지 = SOIC
장착형태 = Surface Mount
핀수 = 8 Organisation = 64K x 8 bit Minimum Operating Supply Voltage = 1.8 V Maximum Operating Supply Voltage = 5.5 V Programming Voltage = 1.8 ??5.5V Number of Bits per Word = 8bit
크기 = 4.9 x 3.9 x 1.25mm Number of Words = 64k 25AA512/25LC512 SPI Serial EEPROM. Microchip ??s 25AA512/25LC512 family of devices are 32 Kbit SPI Serial EEPROMs available in a variety of package, temperature and power supply variants. Featured are Page, Sector and Chip Erase functions typically associated with Flash based products. The Serial Peripheral Interface (SPI) is utilised to provide the required Clock Input (SCK), Data In (SI) and Data Out (SO) signals. The operation of these devices can be paused via a Hold pin (HOLD) which causes inputs to be ignored with the exception higher priority interrupts defined via the Chip Select (CS) pin. Features. 20 MHz maximum Clock Speed Byte and Page-level Write Operations (5 ms maximum): No page or sector erase required 128-byte Page Maximum Write Current: 5 mA at 5.5V, 20 MHz Read Current: 10 mA at 5.5V, 20 MHz Standby Current: 1μA at 2.5V (Deep power-down) Electronic Signature for Device ID Self-Timed Erase and Write Cycles: Page Erase (5 ms typical), Sector Erase (10 ms/sector, typical) and Bulk Erase (10 ms, typical) Sector Write Protection (16K byte/sector): Protect none, 1/4, 1/2 or all of array Built-In Write Protection: Power-on/off data protection circuitry, Write enable latch Write-protect pin Endurance: 1 Million erase/write cycles Data Retention: >200 years ESD Protection: >4000V

순번
분류
제목
작성자
날짜
데이터 없음 ...
순번
답변 상태
제목
작성자
날짜
1
신청 접수
2024-11-01
2
신청 접수
2024-10-31
3
답변 완료
2024-10-24
4
신청 접수
2024-10-21
5
신청 접수
2024-05-27
7
답변 완료
2024-05-13
8
답변 완료
2024-04-16
9
답변 완료
2023-12-08
10
답변 완료
2023-11-21
상품정보이미지