■ 제품필수정보

제조사	Onsemi
제조사품명	FQU13N06LTU
간략설명	N-Channel MOSFET, 11 A, 60 V, 3-Pin IPAK onsemi FQU13N06LTU

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 11 A Maximum Drain Source Voltage = 60 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 115 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 2.5 W Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 4.8 nC @ 5 V
시리즈 = QFET QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor. Fairchild Semiconductor ??s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control. They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.