■ 제품필수정보

제조사	Onsemi
제조사품명	NDS0610
간략설명	P-Channel MOSFET, 120 mA, 60 V, 3-Pin SOT-23 onsemi NDS0610

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 120 mA Maximum Drain Source Voltage = 60 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 10 Ω Channel Mode = Enhancement Minimum Gate Threshold Voltage = 1V Maximum Power Dissipation = 360 mW Transistor Configuration = Single Maximum Gate Source Voltage = -20 V, +20 V Typical Gate Charge @ Vgs = 1.8 nC @ 10 V
최소 작동 온도 = -55 °C Enhancement Mode P-Channel MOSFET, ON Semiconductor. ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi ??s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching. Features and Benefits:. Voltage controlled P-Channel small signal switch High-Density cell design High saturation current Superior switching Great rugged and reliable performance DMOS technology. Applications:. Load Switching DC/DC converter Battery protection Power management control DC motor control