■ 제품필수정보

제조사	Onsemi
제조사품명	FDN306P
간략설명	P-Channel MOSFET, 2.6 A, 12 V, 3-Pin SOT-23 onsemi FDN306P

■ 제품사양

Channel
타입 = P Maximum Continuous Drain Current = 2.6 A Maximum Drain Source Voltage = 12 V
패키지 = SOT-23
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 40 mΩ Channel Mode = Enhancement Minimum Gate Threshold Voltage = 0.4V Maximum Power Dissipation = 500 mW Transistor Configuration = Single Maximum Gate Source Voltage = -8 V, +8 V Transistor Material = Si
시리즈 = PowerTrench PowerTrench® P-Channel MOSFET, Fairchild Semiconductor. PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies. The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations. Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.