■ 제품필수정보

제조사	Onsemi
제조사품명	MJD112T4G
간략설명	onsemi MJD112T4G NPN Darlington Transistor, 4 A 100 V HFE:200, 3-Pin DPAK

■ 제품사양

Transistor
타입 = NPN Maximum Continuous Collector Current = 4 A Maximum Collector Emitter Voltage = 100 V Maximum Emitter Base Voltage = 5 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Transistor Configuration = Single
칩당 요소 수 = 1 Minimum DC Current
이득 = 200 Maximum Base Emitter Saturation Voltage = 4 V Maximum Collector Base Voltage = 100 V Maximum Collector Emitter Saturation Voltage = 3 V Maximum Collector Cut-off Current = 0.02mA
높이 = 2.38mm Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. NPN Darlington Transistors, ON Semiconductor