■ 제품필수정보

제조사	Infineon
제조사품명	FP35R12N2T7BPSA1
간략설명	Infineon FP35R12N2T7BPSA1 3 Phase IGBT, 35 A 1200 V, 23-Pin Module, Chassis Mount

■ 제품사양

Maximum Continuous Collector Current = 35 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 20 mW Configuration = 3 Phase
장착형태 = Chassis Mount Channel
타입 = N
핀수 = 23 Transistor Configuration = 3 Phase