■ 제품필수정보

제조사	Infineon
제조사품명	IKW30N65EL5XKSA1
간략설명	Infineon IKW30N65EL5XKSA1 Single IGBT, 85 A 650 V, 3-Pin PG-TO247

■ 제품사양

Maximum Continuous Collector Current = 85 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 30V Maximum Power Dissipation = 227 W
패키지 = PG-TO247 Channel
타입 = N
핀수 = 3 The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.Low gate charge QG Maximum junction temperature 175°C Qualified according to JEDEC for target applications