■ 제품필수정보
| 제조사 |
Infineon |
| 제조사품명 |
IKP39N65ES5XKSA1 |
| 간략설명 |
Infineon IKP39N65ES5XKSA1 Single IGBT, 62 A 650 V, 3-Pin PG-TO220 |
■ 제품사양
Maximum Continuous Collector Current = 62 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 30V Maximum Power Dissipation = 188 W
패키지 = PG-TO220 Channel
타입 = N
핀수 = 3 Transistor Configuration = Single The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.Very low VCEsat of 1.45 V at 25°C 4 times Ic pulse current (100°C Tc) Maximum junction temperature Tvj 175°C
