■ 제품필수정보

제조사	Infineon
제조사품명	IGB50N65S5ATMA1
간략설명	Infineon IGB50N65S5ATMA1 Single IGBT, 80 A 650 V, 3-Pin PG-TO263

■ 제품사양

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 30V Maximum Power Dissipation = 270 W
패키지 = PG-TO263 Channel
타입 = N
핀수 = 3 Transistor Configuration = Single The Infineon IGB50N65S is 50 A IGBT with anti-parallel diode with no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.Very low VCEsat of 1.35 V at 25°C Maximum junction temperature Tvj 175°C four times nominal current