■ 제품필수정보
| 제조사 |
Infineon |
| 제조사품명 |
IHW40N65R6XKSA1 |
| 간략설명 |
Infineon IHW40N65R6XKSA1 IGBT 650 V, 3-Pin PG-TO247-3 |
■ 제품사양
Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 210 W
패키지 = PG-TO247-3
핀수 = 3 The Infineon IHW40N65R6 is the 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.Frequency range 20-75 kHz Low EMI Very tight parameter distribution Maximum operating TJ of 175 °C
