■ 제품필수정보

제조사	Infineon
제조사품명	IPD60R180C7ATMA1
간략설명	N-Channel MOSFET, 13 A, 600 V, 3-Pin DPAK Infineon IPD60R180C7ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 13 A Maximum Drain Source Voltage = 600 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 180 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = IPD50R The Infineon 600V CoolMOS??C7 superjunction (SJ) MOSFET series offers a ??0% reduction in turn-off losses (E oss ) compared to the CoolMOS??CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Enables increasing switching frequency without loss in efficiency Measure showing key parameter for light load and full load efficiency Doubling the switching frequency will half the size of magnetic components Smaller packages for same R DS(on) Can be used in many more positions for both hard and soft switching topologies