■ 제품필수정보

제조사	Infineon
제조사품명	IPB60R055CFD7ATMA1
간략설명	N-Channel MOSFET, 38 A, 600 V, 3-Pin D2PAK Infineon IPB60R055CFD7ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 38 A Maximum Drain Source Voltage = 600 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 55 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V
칩당 요소 수 = 1
시리즈 = IPA60R The Infineon 600V CoolMOS??CFD7 Superjunction MOSFET IPB60R055CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors.Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on) x Qg and EOSS Best-in-class RDS(on)/package combinations