■ 제품필수정보

제조사	Infineon
제조사품명	IMZ120R045M1XKSA1
간략설명	N-Channel MOSFET, 52 A, 1200 V, 4-Pin TO-247-4 Infineon IMZ120R045M1XKSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 52 A Maximum Drain Source Voltage = 1200 V
패키지 = TO-247-4
장착형태 = Through Hole
핀수 = 4 Maximum Drain Source Resistance = 45 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V
칩당 요소 수 = 1
시리즈 = IMZ1 The Infineon CoolSiC??1200 V, 45 mΩ SiC MOSFET in TO247-4 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages.Best in class switching and conduction losses Benchmark high threshold voltage, Vth > 4 V 0V turn-off gate voltage for easy and simple gate drive Wide gate-source voltage range Robust and low loss body diode rated for hard commutation