■ 제품필수정보

제조사	Infineon
제조사품명	IMW120R350M1HXKSA1
간략설명	N-Channel MOSFET, 4.7 A, 1200 V, 3-Pin TO-247 Infineon IMW120R350M1HXKSA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4.7 A Maximum Drain Source Voltage = 1200 V
패키지 = TO-247
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 350 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V
칩당 요소 수 = 1
시리즈 = IMW1 The Infineon CoolSiC??1200 V, 350 mΩ SiC MOSFET in TO247-3 package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability. In comparison to traditional silicon (Si) based switches like IGBTs and MOSFETs, the SiC MOSFET offers a series of advantages. These include, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic.Best in class switching and conduction losses Benchmark high threshold voltage, Vth > 4 V 0V turn-off gate voltage for easy and simple gate drive Wide gate-source voltage range Robust and low loss body diode rated for hard commutation Temperature independent turn-off switching losses