■ 제품필수정보

제조사	Infineon
제조사품명	IMBF170R650M1XTMA1
간략설명	N-Channel MOSFET, 7.4 A, 1700 V, 7-Pin D2PAK Infineon IMBF170R650M1XTMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 7.4 A Maximum Drain Source Voltage = 1700 V
패키지 = TO-263-7
장착형태 = Surface Mount
핀수 = 7 Maximum Drain Source Resistance = 650 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4.5V
칩당 요소 수 = 1
시리즈 = IMBF1 The Infineon CoolSiC??1700 V, 650 mΩ SiC MOSFET in a TO-263-7 high creepage package is optimized for fly-back topologies to be used in auxiliary power supplies connected to DC-link voltages 600 V up to 1000 V in numerous power applications.Optimized for fly-back topologies Extremely low switching loss 12 V / 0 V gate-source voltage compatible with fly-back controllers Fully controllable dV/dt for EMI optimization SMD package with enhanced creepage and clearance distances, > 7 mm