■ 제품필수정보

제조사	Infineon
제조사품명	FF900R12ME7B11BOSA1
간략설명	Infineon FF900R12ME7B11BOSA1 Dual IGBT, 900 A 1200 V AG-ECONOD

■ 제품사양

Maximum Continuous Collector Current = 900 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 20 mW
패키지 = AG-ECONOD Channel
타입 = N Transistor Configuration = Common Emitter The Infineon EconoDUAL??3 1200 V, 900 A dual TRENCHSTOP??IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Also available with pre-applied Thermal Interface Material.Highest power density Best-in-class VCE sat Tvj op = 175°C overload Improved terminals Optimized creepage distance for 1500 V PV applications