■ 제품필수정보

제조사	Infineon
제조사품명	FF600R12KE4BOSA1
간략설명	Infineon FF600R12KE4BOSA1 Dual IGBT, 600 A 1200 V AG-62MM

■ 제품사양

Maximum Continuous Collector Current = 600 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 1.2 kW
패키지 = AG-62MM Channel
타입 = N Transistor Configuration = Common Emitter The Infineon 62 mm 1200 V, 600 A dual IGBT module with TRENCHSTOP??IGBT4 and emitter controlled diode. Also available as variation with common emitter:FF600R12KE4_E.RoHS compliant 4 kV AC 1 min
단열재 Package with CTI > 400 High Creep age and Clearance Distances UL/CSA Certification with UL1557 E83336