■ 제품필수정보

제조사	Infineon
제조사품명	IRFR3910TRLPBF
간략설명	Silicon N-Channel MOSFET, 16 A, 110 V, 3-Pin DPAK Infineon IRFR3910TRLPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 16 A Maximum Drain Source Voltage = 110 V
패키지 = DPAK (TO-252)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 115 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = HEXFET The Infineon design of HEXFET® Power MOSFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated