■ 제품필수정보

제조사	Infineon
제조사품명	IRFH5250TRPBF
간략설명	Silicon N-Channel MOSFET, 100 A, 25 V, 4-Pin PQFN 5 x 6 Infineon IRFH5250TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 100 A Maximum Drain Source Voltage = 25 V
패키지 = PQFN 5 x 6
장착형태 = Surface Mount
핀수 = 4 Maximum Drain Source Resistance = 0.00115 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.35V
칩당 요소 수 = 1
시리즈 = HEXFET The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ??Metal Oxide Semiconductor Field-Effect Transistors?? MOSFETs are transistor devices which are controlled by a capacitor. The ??Field-Effect??means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Low RDSon (<1.15 mΩ) Low Thermal Resistance to PCB (<0.8°C/W) 100% Rg tested Low Profile (<0.9 mm)