■ 제품필수정보

제조사	Infineon
제조사품명	IRF6620TRPBF
간략설명	Silicon N-Channel MOSFET, 150 A, 20 V DirectFET ISOMETRIC Infineon IRF6620TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 150 A Maximum Drain Source Voltage = 20 V
패키지 = DirectFET ISOMETRIC
장착형태 = Surface Mount Maximum Drain Source Resistance = 0.0036 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.45V
칩당 요소 수 = 1
시리즈 = HEXFET The Infineon design of HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.100% Rg tested Low Conduction and Switching Losses Ultra Low Package Inductance Ideal for CPU Core DC-DC Converters