■ 제품필수정보

제조사	Infineon
제조사품명	IRF1010ESTRLPBF
간략설명	Silicon N-Channel MOSFET, 84 A, 60 V, 3-Pin D2PAK Infineon IRF1010ESTRLPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 84 A Maximum Drain Source Voltage = 60 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.012 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = HEXFET The Infineon design of HEXFET® Power MOSFETs, also known as MOSFET transistors, stands for ??Metal Oxide Semiconductor Field-Effect Transistors?? MOSFETs are transistor devices which are controlled by a capacitor. The ??Field-Effect??means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Advanced process technology Ultra-low on-resistance Fast switching Lead-Free, RoHS Compliant