■ 제품필수정보

제조사	Infineon
제조사품명	IPG20N10S4L22ATMA1
간략설명	Dual Silicon N-Channel MOSFET, 20 A, 100 V, 8-Pin SuperSO8 5 x 6 Dual Infineon IPG20N10S4L22ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 20 A Maximum Drain Source Voltage = 100 V
패키지 = SuperSO8 5 x 6 Dual
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.022 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 2.1V
칩당 요소 수 = 2
시리즈 = CoolMOS The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ??Metal Oxide Semiconductor Field-Effect Transistors?? MOSFETs are transistor devices which are controlled by a capacitor. The ??Field-Effect??means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Green Product (RoHS compliant) MSL1 up to 260°C peak reflow AEC Q101 qualified OptiMOS??- power MOSFET for automotive applications