■ 제품필수정보

제조사	Infineon
제조사품명	IPD80R2K8CEATMA1
간략설명	Silicon N-Channel MOSFET, 1.9 A, 80 V, 3-Pin DPAK Infineon IPD80R2K8CEATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 1.9 A Maximum Drain Source Voltage = 80 V
패키지 = TO-252
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 2.8 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.9V
칩당 요소 수 = 1
시리즈 = CoolMOS The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ??Metal Oxide Semiconductor Field-Effect Transistors?? MOSFETs are transistor devices which are controlled by a capacitor. The ??Field-Effect??means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.Green Product (RoHS compliant) MSL1 up to 260°C peak reflow AEC Q101 qualified OptiMOS??- power MOSFET for automotive applications