■ 제품필수정보

제조사	Infineon
제조사품명	IPB60R099P7ATMA1
간략설명	Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 Infineon IPB60R099P7ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 31 A Maximum Drain Source Voltage = 650 V
패키지 = TO 263
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.099 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V
칩당 요소 수 = 1
시리즈 = CoolMOS The Infineon design of Cool MOS??C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS??C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².Suitable for hard and soft switching (PFC and high performance LLC) Increased MOSFET dv/dt ruggedness to 120V/ns Increased efficiency due to best in class FOM RDS(on)*Eoss and RDS(on)*Qg Best in class RDS(on) /package