■ 제품필수정보

제조사	Infineon
제조사품명	IRF7490TRPBF
간략설명	Dual N-Channel MOSFET Transistor & Diode, 5.4 A, 100 V, 8-Pin SO-8 Infineon IRF7490TRPBF

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 5.4 A Maximum Drain Source Voltage = 100 V
패키지 = SO-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.039 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 20V
칩당 요소 수 = 2
시리즈 = HEXFET The Infineons OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industrys best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Silicon optimized for applications switching below <100KHz Industry standard surface-mount power package Capable of being wave-soldered