■ 제품필수정보

제조사	Infineon
제조사품명	IPU95R2K0P7AKMA1
간략설명	N-Channel MOSFET Transistor & Diode, 4 A, 950 V, 3-Pin IPAK Infineon IPU95R2K0P7AKMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 4 A Maximum Drain Source Voltage = 950 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 2 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1
시리즈 = CoolMOS P7 The Infineon IPU95R2K0P7 designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V Cool MOS P7 technology focuses on the low-power SMPS market. It offer 50V more blocking voltage than its predecessor 900V Cool MOS C3, the 950V Cool MOS P7 series delivers outstanding performance in terms of efficiency, thermal behaviour and ease-of-use. As the all other P7 family members, the 950V Cool MOS P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. Cool MOS P7 is developed with best-in-class VGS(the) of 3V and a narrow tolerance of only ± 0.5V, which makes it easy to drive and design-in.Best-in-class FOM RDS(on) Eoss reduced Qg, Ciss and Coss Best-in-class DPAK RDS(on) of 450 mΩ Best-in-class VGS(the) of 3V and smallest VGS(the) variation of ±0.5V Integrated Zener diode ESD protection up to Class 2 (HBM) Best-in-class quality and reliability