■ 제품필수정보

제조사	Infineon
제조사품명	IPSA70R1K2P7SAKMA1
간략설명	N-Channel MOSFET Transistor & Diode, 9.4 A, 700 V, 3-Pin IPAK Infineon IPSA70R1K2P7SAKMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 9.4 A Maximum Drain Source Voltage = 700 V
패키지 = IPAK (TO-251)
장착형태 = Through Hole
핀수 = 3 Maximum Drain Source Resistance = 1.2 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.5V
칩당 요소 수 = 1
시리즈 = CoolMOS P7 The Infineon has developed he 700V Cool MOS P7 super junction MOSFET series to serve today??s and especially tomorrow??s trends in fly back topologies. It addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to super junction technologies used today. By combining customers??feedback with over 20 years of super junction MOSFET experience, 700V Cool MOS P7 enables best fit for target applications in terms of:Extremely low FOM R DS(on) x E oss lower Q g, E on and E off Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behaviour Allowing high speed switching Integrated protection Zener diode Optimized V (GS)the of 3V with very narrow tolerance of ±0.5V Finely graduated portfolio Cost competitive technology Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology Further efficiency gain at higher switching speed Supporting less magnetic size with lower BOM costs High ESD ruggedness up to HBM Class 2 level Easy to drive and design-in Enabler for smaller form factors and high power density designs Excellent choice in selecting the best fitting product