■ 제품필수정보

제조사	Infineon
제조사품명	IPG20N04S4L07AATMA1
간략설명	Dual N-Channel MOSFET Transistor & Diode, 20 A, 40 V, 8-Pin SuperSO8 5 x 6 Infineon IPG20N04S4L07AATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 20 A Maximum Drain Source Voltage = 40 V
패키지 = SuperSO8 5 x 6
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0072 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 16V
칩당 요소 수 = 2
시리즈 = OptiMOS The Infineon offers a wide range of 20V-40V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in a variety of packages to meet a range of needs and achieving RDS(on) down to 0.6m??The new OptiMOS 6 and Optimos5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behaviour), improved diode recovery and EMC behaviour. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality. For ultimate design flexibility, automotive-qualified MOSFETs are available in a variety of packages to meet a range of needs. Infineon offer customers a steady stream of improvements in current capability, switching behaviour, reliability, package size and overall quality. The newly developed integrated half-bridge is an innovative and cost efficient package solution for motor drive and body applications.Dual N-channel Logic Level - Enhancement mode MSL1 up to 260°C peak reflow 175°C operating temperature