■ 제품필수정보

제조사	Infineon
제조사품명	IPB031N08N5ATMA1
간략설명	N-Channel MOSFET Transistor & Diode, 120 A, 80 V, 3-Pin D2PAK Infineon IPB031N08N5ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 120 A Maximum Drain Source Voltage = 80 V
패키지 = D2PAK (TO-263)
장착형태 = Surface Mount
핀수 = 3 Maximum Drain Source Resistance = 0.0031 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.8V
칩당 요소 수 = 1
시리즈 = OptiMOS 3 The Infineon OptiMOS 5 80V industrial power MOSFET IPB031N08N5 offers a RDS(on) reduction of 43% compared to previous generations and is ideally suited for high switching frequencies. The devices of this family are especially designed for synchronous rectification in telecom and server power supplies. In addition, they can also be utilized in other industrial applications such as solar, low voltage drives and adapters.Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% R DS(on) reduction of up to 44% Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot