■ 제품필수정보

제조사	Infineon
제조사품명	IAUT200N08S5N023ATMA1
간략설명	N-Channel MOSFET Transistor & Diode, 200 A, 80 V, 8-Pin HSOF-8 Infineon IAUT200N08S5N023ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 200 A Maximum Drain Source Voltage = 80 V
패키지 = HSOF-8
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0023 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.8V
칩당 요소 수 = 1
시리즈 = OptiMOS 5 The Infineon offers a wide range of 75V-100V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in various packages a RDS(on) range from 1.2m??up to 190m??by reducing CO2 emissions of passenger cars is accelerating the 48V board net adoption and therefore the 48V like starter generators (main inverter), battery main switches, DCDC converter as well as 48V auxiliaries. For this emerging market, Infineon is offering a broad portfolio of Automotive 80V and 100V MOSFETs, that are housed in different package types like TOLL (HSOF-8), TOLG (HSOG-8), TOLT (HDSOP-16), SSO8 (TDSON-8) and S308 (TSDSON-8), in order to provide solutions for different power requirements as well as different cooling concepts on electronic control unit (ECU) level. Next to the 48V applications the 80V and 100V MOSFETs are also used for example in LED lighting, fuel injection as well as in-vehicle wireless charging.N-channel - Enhancement mode MSL1 up to 260°C peak reflow 175°C operating temperature Ultra low Rds(on) 100% Avalanche tested