■ 제품필수정보

제조사	Infineon
제조사품명	BSC061N08NS5ATMA1
간략설명	Dual N-Channel MOSFET Transistor & Diode, 82 A, 80 V, 8-Pin SuperSO8 5 x 6 Infineon BSC061N08NS5ATMA1

■ 제품사양

Channel
타입 = N Maximum Continuous Drain Current = 82 A Maximum Drain Source Voltage = 80 V
패키지 = SuperSO8 5 x 6
장착형태 = Surface Mount
핀수 = 8 Maximum Drain Source Resistance = 0.0061 O Channel Mode = Enhancement Maximum Gate Threshold Voltage = 3.8V
칩당 요소 수 = 2
시리즈 = OptiMOS 3 The Infineon Infineons OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industrys best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.Optimized for high performance SMPS ,e.g. sync.rec. 100%avalanchetested Superior thermal resistance N-channel QualifiedaccordingtoJEDEC1)for target applications Pb-free lead plating RoHS compliant Halogen-freeaccordingtoIEC61249-2-21